Organic anti-reflective polymer and method for manufacturing thereof

ABSTRACT

Polymers are disclosed having the following formula 1 or 2:  
                 
 
     Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F 2  lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1G, 4G and 16G DRAMs and a great improvement in the production yield.

CROSS-REFERENCES TO RELATED APPLICATIONS

[0001] This application is related to Korean Patent Application No.1999-23382 filed Jun. 22, 1999, and takes priority from that date.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to an organic anti-reflectivecoating (“ARC”) material which allows the stable formation of ultrafinepatterns suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductordevices. More particularly, the present invention relates to an organicanti-reflective coating material which contains a chromophore with highabsorbance at the wavelengths useful for submicrolithography. A layer ofsaid anti-reflective material can prevent the back reflection of lightfrom lower layers of the semiconductor chip, as well as eliminate thestanding waves caused by light and thickness changes of the photoresistlayer itself, while conducting a submicrolithographic process using a248 nm KrF, 193 nm ArF or 157 nm F₂ laser. Also, the present inventionis concerned with an anti-reflective coating composition comprising sucha material, an anti-reflective coating made therefrom and a preparationmethod thereof.

[0004] 2. Description of the Prior Art

[0005] During a submicrolithographic process, one of the most importantprocesses for fabricating highly integrated semiconductor devices, thereinevitably occur standing waves and reflective notching due to theoptical properties of lower layers on the wafer and to changes in thethickness of the photosensitive film applied thereon. In addition, thesubmicrolithographic process generally suffers from a problem of the CD(critical dimension) being altered by the diffracted light and reflectedlight from the lower layers.

[0006] To overcome these problems, it has been proposed to introduce afilm, called an anti-reflective coating, between the substrate and thephotosensitive film to prevent light reflection from the lower layer.Generally, anti-reflective coatings are classified into “organic” and“inorganic” by the materials used and into “absorption” and“interference” by the mechanisms involved. In microlithographicprocesses using an I-line light source (365 nm in wavelength), inorganicanti-reflective coatings are usually used, for example TiN or amorphouscarbon coatings are applied when advantage is taken of an absorptionmechanism, and SiON coatings are applied when an interference mechanismis desired. The SiON anti-reflective coatings are also adapted forsubmicrolithographic processes which uses KrF light sources.

[0007] Recently, extensive and intensive research has been and continuesto be directed to the application of organic anti-reflective coatingsfor such submicrolithography. In view of the present development status,organic anti-reflective coatings, to be useful, must satisfy thefollowing fundamental requirements:

[0008] First, peeling of the photoresist layer due to dissolution insolvents should not take place when conducting a lithographic processwith an organic anti-reflective coating. In this regard, the organicanti-reflective coating materials have to be designed so that theircured films have a cross-linked structure without producing by-products.

[0009] Second, there should be no migration of chemical materials, suchas amines or acids, into and from the anti-reflective coatings. If acidsare migrated from the coatings, the photosensitive patterns are undercutwhile the egress of bases, such as amines, causes a “footing” phenomena.

[0010] Third, faster etch rates should be realized in theanti-reflective coatings than in the upper photosensitive film, allowingan etching process to be conducted smoothly with the photosensitive filmserving as a mask.

[0011] Finally, the organic anti-reflective coatings should be as thinas possible while playing an excellent role in preventing lightreflection.

[0012] As varied as anti-reflective coatings are, those which aresatisfactorily applied to submicrolithographic processes using ArF lighthave not been found, thus far. As for inorganic anti-reflectivecoatings, there have been reported no materials which can controlinterference at the wavelength of ArF light, that is, 193 nm. As aresult, active research has been conducted to develop organic materialswhich can form superb anti-reflective coatings. In fact, in most casesof submicrolithography, the coating of photosensitive layers isnecessarily accompanied by the coating of organic anti-reflective layerswhich prevent the standing waves and reflective notching occurring uponlight exposure and eliminate the influence of back diffraction andreflective light from lower layers. Accordingly, the development of suchanti-reflective coating materials showing high absorption properties atspecific wavelengths is one of the hottest and most urgent issues in theart.

SUMMARY OF THE INVENTION

[0013] The present invention overcomes the problems encountered in theprior art and provides a novel organic compound which can be used in ananti-reflective coating for submicrolithography processes using 193 nmArF and 248 nm KrF lasers.

[0014] The present invention provides a method for preparing an organiccompound which prevents the diffusion and reflection caused by lightexposure in submicrolithography process.

[0015] The present invention further provides an anti-reflective coatingcomposition containing such a diffusion/reflection-preventive compoundand a preparation method therefor.

[0016] The present invention also provides an anti-reflective coatingformed from such a composition and a preparation method therefor.

[0017] The present invention pertains to acrylate polymer resins (alsoreferred to herein as “polymers” or “resins”) which can be used as ananti-reflective coating. The polymer resins contain a chromophore whichshows high absorbance of light having wavelengths of 198 nm and 248 nm.In addition, a cross-linking mechanism between alcohol groups and otherfunctional groups is introduced into the polymer resins, so that across-linking reaction takes place when the coatings of the polymerresins are “hard baked,” i.e., heated at a temperature of 100-300° C.for 10-1,000 seconds. As a result, a great improvement can be effectedin the formation, tightness and dissolution properties of theanti-reflective coatings. Particularly, maximal cross-linking reactionefficiency and storage stability are realized in the practice of thepresent invention.

[0018] The anti-reflective coating resins of the present invention havesuperior solubility in all hydrocarbon solvents, in order to form acoating composition, yet are of such high solvent resistance after hardbaking that they are not dissolved in any solvent at all. Theseadvantages allow the resins to be coated without any problem to form ananti-reflective coating which prevents undercutting and footing problemswhen images are formed on the overlying photosensitive layer.Furthermore, coatings made of the acrylate polymers of the invention arehigher in etch rate than the photosensitive film coatings, therebyimproving the etch selection ratio therebetween.

DETAILED DESCRIPTION OF THE INVENTION

[0019] The acrylate polymer resins according to the present inventionare represented by the following chemical formulas 1 and 2:

[0020] wherein,

[0021] R_(a),R_(b),R_(c) R_(d) each is hydrogen or a methyl group;

[0022] R₁ to R₉, which are the same or different, each representshydrogen, hydroxy, methoxycarbonyl, carboxyl, hydroxymethyl or asubstituted or unsubstituted, linear or branched C₁-C₅ alkyl oralkoxyalkyl;

[0023] w, x, y and z each is a mole fraction in the range from 0.01 to0.99; and

[0024] m and n each is an integer of 1 to 5.

[0025] The polymers of the present invention are designed to show highabsorbance at 193 nm and 248 nm wavelengths. To accomplish this result,a chromophore substituent which is able to absorb light at a wavelengthof 193 nm as well as 248 nm is grafted to the backbone of the polymer.

[0026] The polymer of chemical formula 1 can be prepared by polymerizinga 9-anthraldehydeoximacrylate-type monomer, a hydroxy alkylacrylate-type monomer, and a glycidyl acrylate-type monomer with the aidof an initiator in a solvent. Each of the monomers has a mole fractionranging from 0.01 to 0.99, preferably 0.1 to 0.9.

[0027] The polymer of chemical formula 2 can be prepared by polymerizinga 9-anthraldehydeoximacrylate-type monomer, a hydroxy alkylacrylate-type monomer, a glycidyl acrylate-type monomer and a methylmethacrylate-type monomer at a mole fraction of 0.01 to 0.99 for eachmonomer, preferably 0.1 to 0.9.

[0028] For initiating the polymerization reaction to prepare thepolymers of the chemical formulas 1 and 2, ordinary radical initiatorsmay be used, preferably one selected from the group consisting of2,2-azobisisobutyronitrile (AIBN), acetylperoxide, laurylperoxide andt-butylperoxide. Also, ordinary solvents may be used for thepolymerization, preferably a solvent selected from the group consistingof tetrahydrofuran, toluene, benzene, methylethyl ketone and dioxane.

[0029] Preferably, the polymerization of the polymers of chemicalformulas 1 and 2 is carried out at 50°-90° C.

[0030] The present invention also pertains to an anti-reflective coatingcomposition which comprises a polymer of chemical formula 1 or 2 incombination with at least one additive selected from the groupconsisting of the anthracene derivatives shown in Table 1, below: TABLE1

Chemical Formula 3 Chemical Formula 4 Chemical Formula 5

Chemical Formula 6 Chemical Formula 7 Chemical Formula 8

Chemical Formula 9 Chemical Formula 10 Chemical Formula 11

Chemical Formula 12 Chemical Formula 13 Chemical Formula 14

Chemical Formula 15 Chemical Formula 16 Chemical Formula 17

Chemical Formula 18 Chemical Formula 19 Chemical Formula 20

[0031] In Table 1, R₁₁, R₁₂, R₁₃, R₁₄ and R₁₅ independently representhydrogen, hydroxy, hydroxymethyl, or substituted or unsubstituted linearor branched C₁-C₅ alkyl or alkoxyalkyl.

[0032] An anti-reflective coating composition according to the presentinvention may be prepared by adding a compound selected from Table 1, atan amount of 0.1 to 30% by weight, to a solution of a polymer of thechemical formula 1 or 2 in a solvent, and then filtering the resultantsolution. This coating composition is applied on a wafer that is thenhard-baked to form a cross-linked anti-reflective coating. Semiconductordevices can then be fabricated therefrom.

[0033] Ordinary organic solvents may be used in preparing thecomposition, with preference given to one selected from the groupconsisting of ethyl 3-ethoxy propionate, methyl 3-methoxy propionate,cyclohexanone and propyleneglycol methyletheracetate. The solvent ispreferably used at an amount of 200 to 5000% by weight based on theweight of the anti-reflective coating polymer resin used.

[0034] It has been found that anti-reflective coatings of the presentinvention exhibit high performance in submicrolithographic processesusing 248 nm KrF, 193 nm ArF and 157 nm F₂ lasers as light sources. Thesame is also true when electron beams, EUV (extremely ultraviolet) andion beams are used as light sources.

[0035] The following examples are set forth to illustrate more clearlythe principles and practice of this invention to one skilled in the art.As such, they are not intended to limit the invention, but areillustrative of certain preferred embodiments.

EXAMPLE I Synthesis of poly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate] copolymer Synthesis of9-anthraldehydeoximacrylate

[0036] 0.5 moles of 9-anthracenealdehydeoxim and 0.5 moles of pyridineare dissolved in tetrahydrofuran(THF) and then, 0.5 moles ofacryloylchloride are added. After the completion of the reaction, thereaction solution is filtered, and extraction is conducted with ethylacetate. The extract is washed many times with distilled water and driedby distillation under vacuum, to give 9-anthraldehydeoximacrylate,represented by the following chemical formula 21. The yield is 80%.

Synthesis ofpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate]copolymer

[0037] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehydeoximacrylate synthesized above, 0.3 moles of2-hydroxyethylacrylate, and 0.2 moles of glycidylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of 2,2′-azobisisobutyronitrile(AIBN), the reaction solution is subjected to polymerization at 60°-75°C. for 5-20 hours in a nitrogen atmosphere. After completion of thepolymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 22. The yield is 81%.

EXAMPLE II Synthesis ofpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate]copolymer

[0038] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehydeoximacrylate synthesized in Example I, 0.3 moles of3-hydroxypropylacrylate, and 0.2 moles of glycidylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 23. The yield is 78%.

EXAMPLE III Synthesis ofpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylacrylate]copolymer

[0039] In a 500-ml round-bottom flask are placed 0.5 moles of9-anthraldehydeoxim acrylate, 0.3 moles of 2-hydroxyethylacrylate, and0.2 moles of glycidylacrylate. This mixture is added to 300 g ofseparately prepared THF with stirring. Thereafter, in the presence of0.1-3 g of AIBN, the reaction solution is subjected to polymerization at60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completion ofthe polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitates is filtered and dried to produce apoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 24. The yield is 80%.

EXAMPLE IV

[0040] Synthesis ofpoly[9-anthraldehydeoximacrylate-(3-hdroxypropylacrylate)-glycidylacrylate]copolymer

[0041] In a 500-ml round-bottom flask are placed 0.5 moles of9-anthraldehydeoximacrylate, 0.3 moles of 3-hydroxypropylacrylate, and0.2 moles of glycidylacrylate. This mixture is added to 300 g ofseparately prepared THF with stirring. Thereafter, in the presence of0.1-3 g of AIBN, the reaction solution is subjected to polymerization at60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completion ofthe polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 25. The yield is 80%.

EXAMPLE V Synthesis ofpoly[9-anthraldehydeoximacrylate-(4-hydroxybutylacrylate)-glycidylacrylate]copolymer

[0042] In a 500-ml round-bottom flask are placed 0.5 moles of9-anthraldehydeoxim acrylate, 0.3 moles of 4-hydroxybutylacrylate, and0.2 moles of glycidylacrylate. This mixture is added to 300 g ofseparately prepared THF with stirring. Thereafter, in the presence of0.1-3 g of AIBN, the reaction solution is subjected to polymerization at60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completion ofthe polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximacrylate-(4-hydroxybutylacrylate)-glycidylacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 26. The yield is 81%.

EXAMPLE VI Synthesis of poly[9-anthraldehydeoximmethacrylate-(2-hydroxyethyl acrylate)-glycidylmethacrylate] copolymerSynthesis of 9-anthraldehydeoximmethacrylate

[0043] 0.5 moles of 9-anthracene aldehydeoxim and 0.5 moles of pyridineare dissolved in THF and then, 0.5 moles of methacryloyl chloride areadded. After completion of the reaction, this reaction solution isfiltered, and extraction is conducted with ethyl acetate. The extract iswashed many times with distilled water and dried by distillation undervacuum, to give 9-anthraldehydeoximmethacrylate, represented by the asfollowing chemical formula 27. The yield is 82%.

Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate]copolymer

[0044] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehydeoximmethacrylate synthesized above, 0.3 moles of2-hydroxyethylacrylate, and 0.2 moles of glycidylmethacrylate. Thismixture is added to 300 g of separately prepared THE with stirring.Thereafter, in the presence of 0.1-3 g of 2,2′-azobisisobutyronitrile(AIBN), the reaction solution is subjected to polymerization at 60°-75°C. for 5-20 hours in a nitrogen atmosphere. After completion of thepolymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 28. The yield is 78%.

EXAMPLE VII Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate] copolymer

[0045] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehydeoximmethacrylate synthesized in Example VI, 0.3 moles of3-hydroxypropylacrylate, and 0.2 moles of glycidylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring,after which, in the presence of 0.1-3 g of AIBN, the reaction solutionis subjected to polymerization at 60°-75° C. for 5-20 hours in anitrogen atmosphere. After completion of the polymerization, thesolution is precipitated in ethyl ether or normal-hexane and theprecipitate is filtered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 29. The yield is 81%.

EXAMPLE VIII Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylmethacrylate] copolymer

[0046] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehydeoximmethacrylate, 0.3 moles of 4-hydroxybutylacrylateand, 0.2 moles of glycidylmethacrylate. This mixture is added to 300 gof separately prepared THF with stirring, after which, in the presenceof 0.1-3 g of AIBN, the reaction solution is subjected to polymerizationat 60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completionof the polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 30. The yield is 80%.

EXAMPLE IX Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylacrylate] copolymer

[0047] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehyde oximmethacrylate, 0.3 moles of 2-hydroxyethylacrylate,and 0.2 moles of glycidylacrylate. This mixture is added to 300 g ofseparately prepared THF with stirring, after which, in the presence of0.1-3 g of AIBN, the reaction solution is subjected to polymerization at60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completion ofthe polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 31. The yield is 78%.

EXAMPLE X Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylacrylate] copolymer

[0048] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehyde oximmethacrylate, 0.3 moles of 3-hydroxypropylacrylate,and 0.2 moles of glycidylacrylate. This mixture is added to 300 g ofseparately prepared THE with stirring, after which, in the presence of0.1-3 g of AIBN, the reaction solution is subjected to polymerization at60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completion ofthe polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoxinmuethacrylate-(3-hydroxypropylacrylate)-glycidylacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 32. The yield is 80%.

EXAMPLE XI Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylacrylate] copolymer

[0049] In a 500-ml round-bottom flask are placed 0.5 moles of the9-anthraldehydeoximmethacrylate, 0.3 moles of 4-hydroxybutylacrylate,and 0.2 moles of glycidylacrylate. This mixture is added to 300 g ofseparately prepared THE with stirring, after which, in the presence of0.1-3 g of AIBN, the reaction solution is subjected to polymerization at60°-75° C. for 5-20 hours in a nitrogen atmosphere. After completion ofthe polymerization, the solution is precipitated in ethyl ether ornormal-hexane and the precipitate is filtered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 33. The yield is 80%.

EXAMPLE XII Synthesis ofpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer

[0050] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximacrylate, 0.3 moles of 2-hydroxyethylacrylate, 0.2moles of glycidylmethacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 34. The yield is 80%.

EXAMPLE XIII Synthesis ofpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer

[0051] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximacrylate, 0.3 moles of 3-hydroxypropylacrylate, 0.2moles of glycidylmethacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 35. The yield is 79%.

EXAMPLE XIV Synthesis ofpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylacrylate-methylmethacrylate]copolymer

[0052] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximacrylate, 0.3 moles of 2-hydroxyethylacrylate, 0.2moles of glycidylacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 36. The yield is 81%.

EXAMPLE XV Synthesis ofpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylacrylate-methylmethacrylate]copolymer

[0053] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximacrylate, 0.3 moles of 3-hydroxypropylacrylate, 0.2moles of glycidylacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-bexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 37. The yield is 79%.

EXAMPLE XVI Synthesis ofpoly[9-anthraldehydeoximacrylate-(4-hydroxybutylacrylate-glycidylacrylate-methylmethacrylate]copolymer

[0054] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximacrylate, 0.3 moles of 4-hydroxybutylacrylate, 0.2moles of glycidylacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximacrylate-(4-hydroxybutylacrylate)-glycidylacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 38. The yield is 80%.

EXAMPLE XVII Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate-glycidylmethacrylate-methylmethacrylate]copolymer

[0055] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximmethacrylate, 0.3 moles of 2-hydroxyethylacrylate,0.2 moles of glycidylmethacrylate, and 0.2 moles of methylmethacrylate.This mixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 39. The yield is 80%.

EXAMPLE XVIII Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer

[0056] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximmethacrylate, 0.3 moles of 3-hydroxypropylacrylate,0.2 moles of glycidylmethacrylate, and 0.2 moles of methylmethacrylate.This mixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 40. The yield is 78%.

EXAMPLE XIX Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer

[0057] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximmethacrylate, 0.3 moles of 4-hydroxybutylacrylate,0.2 moles of glycidylmethacrylate, and 0.2 moles of methylmethacrylate.This mixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylmethacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 41. The yield is 81%.

EXAMPLE XX Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylacrylate-methylmethacrylate]copolymer

[0058] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximmethacrylate, 0.3 moles of 2-hydroxyethylacrylate,0.2 moles of glycidylacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 42. The yield is 79%.

EXAMPLE XXI Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylacrylate-methylmethacrylate]copolymer

[0059] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximmethacrylate, 0.3 moles of 3-hydroxypropylacrylate,0.2 moles of glycidylacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropyllacrylate)-glycidylacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 43. The yield is 81%.

EXAMPLE XXII Synthesis ofpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate-glycidylacrylate-methylmethacrylate]copolymer

[0060] In a 500-ml round-bottom flask are placed 0.3 moles of9-anthraldehydeoximmethacrylate, 0.3 moles of 4-hydroxybutylacrylate,0.2 moles of glycidylacrylate, and 0.2 moles of methylmethacrylate. Thismixture is added to 300 g of separately prepared THF with stirring.Thereafter, in the presence of 0.1-3 g of AIBN, the reaction solution issubjected to polymerization at 60°-75° C. for 5-20 hours in a nitrogenatmosphere. After completion of the polymerization, the solution isprecipitated in ethyl ether or normal-hexane and the precipitate isfiltered and dried to produce apoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylacrylate-methylmethacrylate]copolymer, a polymer according to the present invention, represented bythe following chemical formula 44. The yield is 80%.

EXAMPLE XXIII Preparation of Anti-Reflective Coating

[0061] In 200-5,000% by weight of propyleneglycol methylether acetate(PGMEA) are dissolved a resin having a chemical structure of chemicalformula 1 or 2, obtained in any of Examples I to XXII. This solution,alone or in combination with 0.1-30% by weight of at least one additiveselected from the compounds of chemical formulas 3 to 20 in Table 1, isfiltered, coated on a wafer, and hard-baked at 100°-300° C. for 10-1,000sec. On the anti-reflective coating thus formed, a photosensitivematerial may be applied and imaged to form ultrafine patterns in theconventional manner.

[0062] As described hereinbefore, the anti-reflective coatings of thepresent invention, which are obtained from a polymer resin of chemicalformula 1 or 2, alone or in combination with an additive of one of thechemical formulas 3 to 20, contains chromophore substituents sufficientto exhibit absorbance at the wavelengths useful for submicrolithography.Thus, the anti-reflective coatings of the present invention can play anexcellent role in forming ultrafine patterns. For example, these ARCscan prevent the back reflection from lower layers of the semiconductorelement, as well as eliminate standing waves caused by light andthickness changes of the photoresist itself during asubmicrolithographic process using a 248 nm KrF, 193 nm ArF or 157 nm F₂laser. This results in the stable formation of ultrafine patternssuitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and agreat improvement in the production yield.

[0063] Although the invention has been described in detail by referringto certain preferred embodiments, it will be understood that variousmodifications can be made within the spirit and scope of the invention.The invention is not to be limited except as set forth in the followingclaims.

What is claimed is:
 1. 9-Anthraldehydeoximacrylate, represented by thefollowing chemical formula 21:


2. A method for preparing 9-anthraldehydeoximacrylate, which comprisesreacting 9-anthracenealdehydeoxim with acryloylchloride in the presenceof pyridine in tetrahydrofuran.
 3. 9-Anthraldehydeoximmethacrylate,represented by the following chemical formula 27:


4. A method for preparing 9-anthraldehydeoximmethacrylate, whichcomprises reacting 9-anthracenealdehydeoxim with methacryloyl chloridein the presence of pyridine in tetrahydrofuran.
 5. A polymer representedby the following chemical formula 1:

wherein, R_(a), R_(b) and R_(c) each is hydrogen or a methyl group; R₁to R₉, which are the same or different, each represents hydrogen,hydroxy, methoxycarbonyl, carboxyl, hydroxymethyl, a substituted orunsubstituted, linear or branched C₁-C₅ alkyl or alkoxyalkyl; w, x and yeach is a mole fraction in the range from 0.01 to 0.99; and m and n eachis an integer of 1 to
 5. 6. A polymer as set forth in claim 5, whereinR_(a) and R_(b) each is hydrogen, R_(c) is a methyl group, R₁ to R₉ eachis hydrogen, the mole ratio of w:x:y is 0.5:0.3:0.2 and m and n are 2and 1, respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate].7. A polymer as set forth in claim 5, wherein R_(a) and R_(b) each ishydrogen, R_(c) is a methyl group, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 3 and 1, respectively,thereby providingpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate].8. A polymer as set forth in claim 5, wherein R_(a), R_(b) and R_(c)each is hydrogen, R₁ to R₉ each is hydrogen, the mole ratio of w:x:y is0.5:0.3:0.2 and m and n are 2 and 1, respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylacrylate].9. A polymer as set forth in claim 5, wherein R_(a), R_(b) and R_(c)each is hydrogen, R₁ to R₉ each is hydrogen, the mole ratio of w:x:y is0.5:0.3:0.2 and m and n are 3 and 1, respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylacrylate].10. A polymer as set forth in claim 5, wherein R_(a), R_(b) and R_(c)each is hydrogen, R₁ to R₉ each is hydrogen, the mole ratio of w:x:y is0.5:0.3:0.2 and m and n are 4 and 1, respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(4-hydroxybutylacrylate)-glycidylacrylate].11. A polymer as set forth in claim 5, wherein R_(a) and R_(c) each is amethyl group, R_(b) is a hydrogen, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 2 and 1, respectively,thereby providingpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate].12. A polymer as set forth in claim 5, wherein R_(a) and R_(c) each is amethyl group, R_(b) is a hydrogen, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 3 and 1, respectively,thereby providingpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate].13. A polymer as set forth in claim 5, wherein R_(a) and R_(c) each is amethyl group, R_(b) is a hydrogen, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 4 and 1, respectively,thereby providingpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylmethacrylate].14. A polymer as set forth in claim 5, wherein R_(a) is a methyl group,R_(b) and R_(c) each is a hydrogen, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 2 and 1, respectively,thereby providingpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylacrylate].15. A polymer as set forth in claim 5, wherein R_(a) is a methyl group,R_(b) and R_(c) each is a hydrogen, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 3 and 1, respectively,thereby providingpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylacrylate].16. A polymer as set forth in claim 5, wherein R_(a) is a methyl group,R_(b) and R_(c) each is a hydrogen, R₁ to R₉ each is hydrogen, the moleratio of w:x:y is 0.5:0.3:0.2 and m and n are 4 and 1, respectively,thereby providingpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylacrylate].17. A method of preparing a polymer according to claim 5, whichcomprises polymerizing a 9-anthraldehydeoximacrylate-type monomer, ahydroxyalkylacrylate-type monomer and a glycidyl acrylate-type monomerwith the aid of an initiator in a solvent.
 18. A method as set forth inclaim 17, wherein the molar ratio of 9-anthraldehydeoximacrylate typemonomer:hydroxyalkylacrylate type monomer: glycidylacrylate type monomeris in a range of 0.1-0.99:0.1-0.99:0.1-0.99.
 19. A method as set forthin claim 17, wherein the initiator is selected from the group consistingof 2,2-azobisisobutyronitrile, acetylperoxide, laurylperoxide, andt-butylperoxide.
 20. A method as set forth in claim 17, wherein thesolvent is selected from the group consisting of tetrahydrofuran,toluene, benzene, methylethyl ketone and dioxane.
 21. A method as setforth in claim 17, wherein the polymerization is carried out at atemperature of 50°-90° C.
 22. A polymer represented by the followingchemical formula 2:

wherein, R_(a), R_(b), R_(c) and R_(d) each is hydrogen or a methylgroup; R₁ to R₉ each represents hydrogen, hydroxy, methoxycarbonyl,carboxyl, hydroxymethyl, a substituted or unsubstituted, linear orbranched alkyl or alkoxyalkyl of C₁-C₅; w, x, y and z each is a molefraction in the range from 0.01 to 0.99; and m and n each is an integerof 1 to
 5. 23. A polymer as set forth in claim 22, wherein R_(a), R_(b)each is hydrogen, R_(c) and R_(d) each is a methyl group, R₁ to R₉ eachis hydrogen, the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and nare 2 and 1, respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate-methylmethacrylate].24. A polymer as set forth in claim 22, wherein R_(a), R_(b) each ishydrogen, R_(c) and R_(d) each is a methyl group, R₁ to R₉ each ishydrogen, the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 3and 1, respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate-methylmethacrylate].25. A polymer as set forth in claim 22, wherein R_(a), R_(b), R_(c) eachis hydrogen, and R_(d) is a methyl group, R₁ to R₉ each is hydrogen, themole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 2 and 1,respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(2-hydroxyethylacrylate)-glycidylacrylate-methylmethacrylate].26. A polymer as set forth in claim 22, wherein R_(a), R_(b), R_(c) eachis hydrogen, and R_(d) is a methyl group, R₁ to R₉ each is hydrogen, themole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 3 and 1,respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(3-hydroxypropylacrylate)-glycidylacrylate-methylmethacrylate].27. A polymer as set forth in claim 22, wherein R_(a), R_(b), R_(c) eachis hydrogen, and R_(d) is a methyl group, R₁ to R₉ each is hydrogen, themole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 4 and 1,respectively, thereby providingpoly[9-anthraldehydeoximacrylate-(4-hydroxybutylacrylate)-glycidylacrylate-methylmethacrylate].28. A polymer as set forth in claim 22, wherein R_(a), R_(c), R_(d) eachis a methyl group, and R_(b) is a hydrogen, R₁ to R₉ each is hydrogen,the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 2 and 1,respectively, thereby providingpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylmethacrylate-methylmethacrylate].29. A polymer as set forth in claim 22, wherein R_(a), R_(c), R_(d) eachis a methyl group, and R_(b) is a hydrogen, R₁ to R₉ each is hydrogen,the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 3 and 1,respectively, thereby providingpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylmethacrylate-methylmethacrylate].30. A polymer as set forth in claim 22, wherein R_(a), R_(c), R_(d) eachis a methyl group, and R_(b) is a hydrogen, R₁ to R₉ each is hydrogen,the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 4 and 1,respectively, thereby providingpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylmethacrylate-methylmethacrylate].31. A polymer as set forth in claim 22, wherein R_(a) and R_(d) each isa methyl group, and R_(b) and R_(c) each is hydrogen, R₁ to R₉ each ishydrogen, the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 2and 1, respectively, thereby providingpoly[9-anthraldehydeoximmethacrylate-(2-hydroxyethylacrylate)-glycidylacrylate-methylmethacrylate].32. A polymer as set forth in claim 22, wherein R_(a) and R_(d) each isa methyl group, and R_(b) and R_(c) each is hydrogen, R₁ to R₉ each ishydrogen, the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 3and 1, respectively, thereby providingpoly[9-anthraldehydeoximmethacrylate-(3-hydroxypropylacrylate)-glycidylacrylate-methylmethacrylate].33. A polymer as set forth in claim 22, wherein R_(a) and R_(d) each isa methyl group, and R_(b) and R_(c) each is hydrogen, R₁ to R₉ each ishydrogen, the mole ratio of w:x:y:z is 0.3:0.3:0.2:0.2 and m and n are 4and 1, respectively, thereby providingpoly[9-anthraldehydeoximmethacrylate-(4-hydroxybutylacrylate)-glycidylacrylate-methylmethacrylate].34. A method for preparing a polymer according to claim 22 whichcomprises polymerizing a 9-anthraldehydeoximacrylate-type monomer, ahydroxyalkylacrylate-type monomer, a glycidylacrylate-type monomer and amethylmethacrylate monomer with the aid of an initiator in a solvent.35. A method as set forth in claim 34, wherein the molar ratio of9-anthraldehydeoximacrylate-type monomer:hydroxyalkylacrylate-typemonomer:glycidyl acrylate-type monomer:methylmethacrylate monomer is ina range of 0.1-0.99:0.1-0.99:0.1-0.99:0.1-0.99.
 36. A method as setforth in claim 34, wherein the initiator is selected from the groupconsisting of 2,2-azobisisobutyronitrile, acetylperoxide,laurylperoxide, and t-butylperoxide.
 37. A method as set forth in claim34, wherein the solvent is selected from the group consisting oftetrahydrofuran, toluene, benzene, methylethyl ketone and dioxane.
 38. Amethod as set forth in claim 34, wherein the polymerization is carriedout at a temperature of 50°-90° C.
 39. An anti-reflective coatingcomprising a polymer according to claim
 5. 40. An anti-reflectivecoating comprising a polymer according to claim
 22. 41. Ananti-reflective coating according to claim 39 or claim 40, furthercomprising at least one compound selected from the group consisting ofthe compounds in the following Table 1: TABLE 1

Chemical Formula 3 Chemical Formula 4 Chemical Formula 5

Chemical Formula 6 Chemical Formula 7 Chemical Formula 8

Chemical Formula 9 Chemical Formula 10 Chemical Formula 11

Chemical Formula 12 Chemical Formula 13 Chemical Formula 14

Chemical Formula 15 Chemical Formula 16 Chemical Formula 17

Chemical Formula 18 Chemical Formula 19 Chemical Formula 20

wherein, R₁₁, R₁₂, R₁₃, R₁₄ and R₁₅ independently represent hydrogen,hydroxy, hydroxymethyl, or substituted or unsubstituted linear orbranched C₁-C₅ alkyl or alkoxyalkyl.
 42. A method for preparing ananti-reflective coating, which comprises dissolving a polymer of claim 5or a polymer of claim 22 in an organic solvent, filtering the resultantsolution, coating the solution on a wafer, and subjecting the coatedwafer to hard-baking.
 43. A method as set forth in claim 42, wherein theorganic solvent is selected from the group consisting of ethyl3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone andpropyleneglycolmethyletheracetate, and said solvent is used in an amountof 200-5,000% by weight based on the weight of the polymer.
 44. A methodas set forth in the claim 42, wherein the hard-baking process is carriedout at 100°-300° C.
 45. A method for preparing an anti-reflectivecoating according to claim 42 which further comprises adding at leastone additive selected from the group consisting of the compounds inTable 1 below: TABLE 1

Chemical Formula 3 Chemical Formula 4 Chemical Formula 5

Chemical Formula 6 Chemical Formula 7 Chemical Formula 8

Chemical Formula 9 Chemical Formula 10 Chemical Formula 11

Chemical Formula 12 Chemical Formula 13 Chemical Formula 14

Chemical Formula 15 Chemical Formula 16 Chemical Formula 17

Chemical Formula 18 Chemical Formula 19 Chemical Formula 20

wherein, R₁₁, R₁₂, R₁₃, R₁₄ and R₁₅ independently represent hydrogen,hydroxy, hydroxymethyl, or substituted or unsubstituted linear orbranched C₁-C₅ alkyl or alkoxyalkyl.
 46. A method as set forth in claim45, wherein the organic solvent is selected from the group consisting ofethyl 3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone andpropyleneglycolmethyletheracetate and said solvent is used in an amountof 200-5,000% by weight based on the weight of the polymer.
 47. A methodas set forth in claim 45, wherein the hard-baking process is carried outat 100°-300° C.
 48. A method as set forth in claim 45, wherein theadditive is used at an amount of 0.1 to 30% by weight.
 49. Asemiconductor device comprising an anti-reflective coating including apolymer of claim 5 or claim 22.